Carrier capture into InAs/GaAs quantum dots detected by a simple degenerate pump-probe technique

被引：13

作者：

Li, Q

Xu, ZY ^{[1
]}

Ge, WK

机构：

[1] Acad Sinica, Inst Semicond, Natl Lab Supperlattices & Microstruct, Beijing 100083, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 115卷 / 02期

基金：

中国国家自然科学基金;

关键词：

nanostructures; semiconductors; optical properties; time-resolved optical spectroscopies;

D O I：

10.1016/S0038-1098(00)00139-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We demonstrate that the carrier capture and relaxation processes in InAs/GaAs quantum dots can be detected by a simple degenerate pump-probe technique. We have observed a rising process in the transient reflectivity, following the initial fast relaxation in a GaAs matrix, and assigned this rising process to the carrier capture from the GaAs barriers to the InAs layers. The assignment was modeled using the Kramers-Kronig relations. The capture time was found to depend strongly on the InAs layer thickness as well as on the excitation density and photon energy. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：105 / 108

页数：4

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