CNx film characterization by surface sensitive methods:: XPS and XAES

被引:12
作者
Dementjev, AP
de Graaf, A
Dolgiy, DI
Olshanski, ED
Shulga, YM
Serov, AA
机构
[1] RRC Kurchatov Inst, IRTM, Moscow 123182, Russia
[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[3] Inst Chem Phys Res, Chernogolovka 142432, Moscow Region, Russia
[4] RRC Kurchatov Inst, IACP, Moscow 123182, Russia
关键词
C3N4; electron spectroscopy; implantation; nitrides;
D O I
10.1016/S0925-9635(98)00356-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The C 1s and N 1s XPS spectra of samples prepared: in situ (nitrogen ion implantation to graphite); ex situ films with several ratio of C/N and C/N/O and melomine (C3N6H6) have been studied. The C 1s spectra of the standard C3N6H6 have splitting 3.3 eV that cannot be explain only by the chemical interaction; besides, in that compound the atoms of carbon have only one chemical state. It is very problematic to identify the C 1s spectrum in terms only of chemical shifts, but probably it is stipulated by some unknown physical properties of the CNx and CNxOy chemical compounds. The problems of the synthesis of C3N4 are the difficulties of the formation of stoichiometric compound and a monitoring of sp(3)-bonds of carbon atoms as well. The possibilities of the C KVV Auger identification of sp(2)-sp(3)-bonds in CNx and CNxOy are shown. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:601 / 604
页数:4
相关论文
共 12 条
  • [1] BEAMSON G, 1992, SCI ESCA 300 DATABAS, P182
  • [2] FORMATION OF C-N THIN-FILMS BY ION-BEAM DEPOSITION
    BOYD, KJ
    MARTON, D
    TODOROV, SS
    ALBAYATI, AH
    KULIK, J
    ZUHR, RA
    RABALAIS, JW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (04): : 2110 - 2122
  • [3] Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition
    Chen, LC
    Yang, CY
    Bhusari, DM
    Chen, KH
    Lin, MC
    Lin, JC
    Chuang, TJ
    [J]. DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) : 514 - 518
  • [4] DEGRAAF A, COMMUNICATION
  • [5] The unique capability of X-ray photon spectroscopy and X-ray excited Auger electron spectroscopy in identifying the sp2/sp3 ratio on the surface of growing carbon films
    Dementjev, AP
    Petukhov, MN
    Baranov, AM
    [J]. DIAMOND AND RELATED MATERIALS, 1998, 7 (10) : 1534 - 1538
  • [6] The roles of H and O atoms in diamond growth
    Dementjev, AP
    Petukhov, MN
    [J]. DIAMOND AND RELATED MATERIALS, 1997, 6 (2-4) : 486 - 489
  • [7] An X-ray photoelectron spectroscopy study of carbon nitride films grown by low energy ion implantation
    Galan, L
    Montero, I
    Rueda, F
    [J]. SURFACE & COATINGS TECHNOLOGY, 1996, 83 (1-3) : 103 - 108
  • [8] STRUCTURAL-PROPERTIES AND ELECTRONIC-STRUCTURE OF LOW-COMPRESSIBILITY MATERIALS - BETA-SI3N4 AND HYPOTHETICAL BETA-C3N4
    LIU, AY
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1990, 41 (15): : 10727 - 10734
  • [9] An XPS study of carbon nitride synthesized by ion beam nitridation of C60 fullerene
    Ripalda, JM
    Montero, I
    Galan, L
    [J]. DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) : 402 - 406
  • [10] Synthesis of crystalline carbon nitride thin films by laser processing at a liquid-solid interface
    Sharma, AK
    Ayyub, P
    Multani, MS
    Adhi, KP
    Ogale, SB
    Sunderaraman, M
    Upadhyay, DD
    Banerjee, S
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (23) : 3489 - 3491