Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation

The gate-oxide downscaling limit in thermal-enhanced remote plasma nitridation (RPN) process for forming ultrathin gate dielectric has been extensively investigated. In this work, the radical-induced re-oxidaiion effect has been observed as the base-oxide thickness less than 20 Angstrom. Nevertheless, for the base-oxide thickness thicker than 17 Angstrom, the RPN process still can effectively reduce the equivalent oxide thickness (EOT) and almost no transconductance degradation is observed. Further thinning of the base oxide will degrade the reduction of EOT and the transconductance with the RPN process, due to the penetration of nitrogen radicals into the active region. The physical and electrical properties of the ultrathin oxides (10 similar to 20 Angstrom) affected by this radical penetration have been studied extensively as well. Finally, the thinnest thickness has been estimated by compromising the feasible base-oxide thickness, the degradation of device performance, and the gate leakage criteria. Based on the forementioned criteria, we find the 14 Angstrom EOT to be the downscaling limit of the gate-oxide thickness.