High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies

被引：13

作者：

Chen, CH ^{[1
]}

Fang, YK

Yang, CW

Ting, SF

Tsair, YS

Wang, MF

Lin, YM

Yu, MC

Chen, SC

Yu, CH

Liang, MS

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, Tainan 70101, Taiwan

[2] Taiwan Semicond Mfg Co Ltd, Hsinchu, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 06期

关键词：

gate dielectric; low pressure chemical vapor deposition; (LPCVD); nitride/oxide (N/O); remote plasma nitridation (RPN); ultrathin;

D O I：

10.1109/55.924835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrathin nitride/oxide (N/O) gate dielectric stacks with equivalent oxide thickness of 1.6 nm have been fabricated by combining remote plasma nitridation (RPN) and low pressure chemical vapor deposition (LPCVD) technologies. NMOSFETs with these gate stacks exhibit good interface properties, improved subthreshold characteristics, low off-state currents, enhanced reliability, and about one order of magnitude reduction in gate leakage current to their oxide counterparts.

引用

页码：260 / 262

页数：3

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