Studies of Na-irradiated Ni/Si bilayers: Na migration and NiSi formation

被引：6

作者：

Lieb, KP

Haussalo, P

Bolse, W

Illgner, C

Keinonen, J

Niederdrenk, M

机构：

[1] UNIV GOTTINGEN,SONDERFORSCH BEREICH 345,D-37073 GOTTINGEN,GERMANY

[2] UNIV HELSINKI,ACCELERATOR LAB,FIN-00014 HELSINKI,FINLAND

来源：

THIN SOLID FILMS | 1997年 / 302卷 / 1-2期

基金：

芬兰科学院;

关键词：

interfaces; ion bombardment; nuclear reaction analysis (NRA); Rutherford backscattering spectroscopy;

D O I：

10.1016/S0040-6090(97)00020-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ion beams of 200 keV Na-23(+) at a fluence of 1 X 10(17) cm(-2) were implanted at 77 K into Ni/Si bilayer couples. The Ni and Si concentration profiles were measured via Rutherford backscattering spectrometry (RBS), and the Na-23 and H-1 profiles via resonant nuclear reaction analysis (RNRA). Migration of sodium, radiation-induced and thc thermal silicide formation, and hydrogen decoration were investigated upon thermal treatment up to 930 K. The results on Na migration are compared with those obtained after Na implantation in metals, silicon and Ni/SiO2 bilayers. (C) 1997 Elsevier Science S.A.

引用

页码：162 / 168

页数：7

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