Single-electron tunneling through Si nanocrystals dispersed in phosphosilicate glass thin films

被引：39

作者：

Inoue, Y

Tanaka, A

Fujii, M ^{[1
]}

Hayashi, S

Yamamoto, K

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

[2] Kobe Univ, Grad Sch Sci & Technol, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 06期

关键词：

D O I：

10.1063/1.371189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical transport properties of extremely thin phosphosilicate glass (PSG) films containing Si nanocrystals (nc-Si) a few nanometers in diameter were studied. Samples were prepared by cosputtering Si and PSG targets, and post annealing. Periodic Coulomb staircases were clearly observed in the dc current-voltage (I-V) characteristics along the vertical direction of films. Although the step structure was broadened with increasing the temperature, it remained up to 200 K. The I-V curve could be well fitted by Monte Carlo simulation with a simple double-barrier structure model. Advantages of using PSG instead of SiO2 as surrounding matrices of nc-Si to observe single-electron tunneling effects are discussed. (C) 1999 American Institute of Physics. [S0021-8979(99)03918-3].

引用

页码：3199 / 3203

页数：5

共 21 条

[1] THEORY OF SINGLE-ELECTRON CHARGING OF QUANTUM-WELLS AND DOTS [J].