Pattern-dependent charging in plasmas: Electron temperature effects

被引:26
作者
Hwang, GS
Giapis, KP
机构
[1] Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA
关键词
D O I
10.1103/PhysRevLett.79.845
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The differential charging of high-aspect-ratio dense structures during plasma etching is studied by two-dimensional Monte Carlo simulations. Enhanced electron shadowing at large electron temperatures is found to reduce the electron current density to the bottom of narrow trenches, causing buildup of large charging potentials on dielectric surfaces. These potentials alter the local ion dynamics, increase the flux of deflected ions towards the sidewalls, and result in distorted profiles. The simulation results capture reported experimental trends and reveal the physics of charging damage.
引用
收藏
页码:845 / 848
页数:4
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