Electron mobility in ULSI MOSFET's: Effect of interface traps and oxide nitridation

被引：11

作者：

Perron, L

Lacaita, AL

Pacelli, A

Bez, R

机构：

[1] POLITECN MILAN, CEQSE, CNR, I-20133 MILAN, ITALY

[2] SGS THOMSON MICROELECT, I-20041 AGRATE BRIANZA, ITALY

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 05期

关键词：

D O I：

10.1109/55.568778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We provide a comprehensive set of electron mobility measurements at 300 K and 77 K on standard and NaO-nitrided MOSFET's, with channel doping in the range 3.8 x 10(17)-1.25 x 10(18) cm(-3), In such heavily-doped devices, the Fermi level always lies very close to the conduction band edge, where interface traps reach the highest density and the shortest lifetimes, We show that these traps contribute to the gate-channel capacitance, leading to a systematic overestimate of the channel charge, This effect has the largest impact precisely in the roll-off region of the mobility curves, which has been the subject of recent theoretical investigations.

引用

收藏

页码：235 / 237

页数：3

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