Self-healing of stacking faults in homoepitaxial growth on Ir(111)

被引：21

作者：

Busse, C ^{[1
]}

Michely, T ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany

来源：

SURFACE SCIENCE | 2004年 / 552卷 / 1-3期

关键词：

iridium; surface defects; scanning tunneling microscopy; metallic films; growth; nucleation;

D O I：

10.1016/j.susc.2004.01.031

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of a thin fiIm in the presence of stacking faults is studied from the nucleation phase to the closure of the first monolayer in the face-centered cubic (fcc) system Ir/Ir(1 1 1) using, temperature-variable scanning tunneling microscopy. The islands that nucleate in the hexagonal close-packed (hcp) stacking cannot coalesce with the regular islands. instead, an assimilation process is observed, where material is transported from the metastable hcp to the energetically favorable fcc sites. The atomic mechanisms governing this transfer are identified. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：281 / 293

页数：13

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