Luminescence properties of ZnO films annealed in growth ambient and oxygen

被引：67

作者：

Wang, J ^{[1
]}

Du, GT ^{[1
]}

Zhang, YT ^{[1
]}

Zhao, BJ ^{[1
]}

Yang, XT ^{[1
]}

Liu, DL ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect & Engn, Changchun 130023, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 263卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

deep-level emission; UV emission; metalorganic chemical vapor deposition;

D O I：

10.1016/j.jcrysgro.2003.11.059

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Thermal annealing was performed under growth conditions and in oxygen atmosphere. The photoluminescence (PL) spectra of the as-grown, annealed under growth conditions and oxygen atmosphere ZnO films were studied. The intensity of the ultraviolet (UV) emission peak from exciton transitions in the sample annealed under growth conditions increased, while the intensity of the deep-level emission peak decreased. For the sample annealed in oxygen atmosphere, the peak related to deep level strongly increased. Through the analysis and calculation, we suggest that the deep-level luminescence centers are zinc vacancy (V-Zn) and antisite defect (O-Zn), and the centers in the film annealed in oxygen atmosphere increase. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：269 / 272

页数：4

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