High-resolution core-level study of initial oxygen adsorption on Si(001):: Surface stoichiometry and anomalous Si 2p core-level shifts

被引：65

作者：

Yeom, HW ^{[1
]}

Hamamatsu, H

Ohta, T

Uhrberg, RIG

机构：

[1] Univ Tokyo, KEK PF, Res Ctr Spectrochem, Tsukuba, Ibaraki 3050801, Japan

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[3] Univ Tokyo, Dept Chem, Tokyo 113, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.59.R10413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The submonolayer oxygen adsorption on the Si(001) surface is studied by high-resolution Si 2p photoemission. Significant intensities of Si 2p components due to the Si2+ and Si3+ species are observed from the very early stage of adsorption at 120 K, which grow linearly with the oxygen coverage. This indicates an active agglomeration of oxygen adsorbates even for submonolayer adsorption at low temperatures. Annealing above similar to 500 K of oxygen adlayers formed at 120 K induces not only changes of the adlayer stoichiometry but also shifts of the Si 2p binding energies for the Si2+ and Si3+ species by 0.14 and 0.23 eV, respectively. This change demonstrates the sensitivity of the Si 2p binding energies beyond the chemical shift.

引用

页码：10413 / 10416

页数：4

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