Vapor phase epitaxy of InN using InCl and InCl3 sources

被引：43

作者：

Takahashi, N

Ogasawara, J

Koukitu, A

机构：

[1] Department of Applied Chemistry, Tokyo Univ. Agric. and Technology, Koganei

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 172卷 / 3-4期

关键词：

D O I：

10.1016/S0022-0248(96)00751-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The epitaxial growth of InN was tried on (0001) sapphire substrates by vapor phase epitaxy using InCl or InCl3 as In sources, NH3 or monomethylhydrazine (MMHy) as N sources. From the combination of these sources, the InCl3-NH3 system was the most suitable one to obtain an appreciable growth rate of hexagonal InN. The growth rate of InN in the InCl3-NH3 system has been investigated as a function of the various growth parameters. The results showed that the growth of InN in the InCl3-NH3 system was mass transport limited. In addition, it was found that the growth in an inert carrier gas was indispensable for a high growth rate of InN growth using the InCl3-NH3 system.

引用

页码：298 / 302

页数：5

共 10 条

[1] STRUCTURE CONTROL OF GAN FILMS GROWN ON (001) GAAS SUBSTRATES BY GAAS SURFACE PRETREATMENTS [J].

FUJIEDA, S ;

MATSUMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1665-L1667

[2] SUBSTRATE NITRIDATION EFFECTS ON GAN GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY USING RF-RADICAL NITROGEN-SOURCE [J].

KIKUCHI, A ;

HOSHI, H ;

KISHINO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B) :688-693

[3] INSITU GRAVIMETRIC MONITORING OF THE GAAS GROWTH-PROCESS IN ATOMIC LAYER EPITAXY [J].

KOUKITU, A ;

IKEDA, H ;

YASUTAKE, H ;

SEKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (11A) :L1847-L1849

[4]

MARASINA LA, 1977, KRIST TECH, V12, pA541

[5] NEW EPITAXIAL-GROWTH METHOD OF CUBIC GAN ON (100)GAAS USING (CH3)(3)GA, HCL AND NH3 [J].

MIURA, Y ;

TAKAHASHI, N ;

KOUKITU, A ;

SEKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (4A) :L401-L404

[6] Investigation of buffer layer of cubic GaN epitaxial films on (100) GaAS grown by metalorganic-hydrogen chloride vapor-phase epitaxy [J].

Miura, Y ;

Takahashi, N ;

Koukitu, A ;

Seki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2A) :546-550

[7] GROWTH OF INN THIN-FILMS BY HYDRIDE VAPOR-PHASE EPITAXY [J].

SATO, Y ;

SATO, S .

JOURNAL OF CRYSTAL GROWTH, 1994, 144 (1-2) :15-19

[8] INFLUENCE OF GROWTH-RATES ON PROPERTIES OF INN THIN-FILMS [J].

SATO, Y ;

SATO, S .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :262-265

[9] HETEROEPITAXIAL GROWTH OF INN BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

WAKAHARA, A ;

YOSHIDA, A .

APPLIED PHYSICS LETTERS, 1989, 54 (08) :709-711

[10] In situ monitoring of adsorption and desorption of atomic nitrogen on GaAs (001) and (111)A surfaces [J].

Yamauchi, Y ;

Uwai, K ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L80-L83

← 1 →