From ambi- to unipolar behavior in discotic dye field-effect transistors

被引：68

作者：

Tsao, Hoi Nok ^{[1
]}

Pisula, Wojciech ^{[1
]}

Liu, Zhihong ^{[1
]}

Osikowicz, Wojciech ^{[2
]}

Salaneck, William R. ^{[2
]}

Muellen, Klaus ^{[1
]}

机构：

[1] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

[2] Linkoping Univ, Dept Phys Chem & Biol, IFM, S-58183 Linkoping, Sweden

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 14期

关键词：

D O I：

10.1002/adma.200702992

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ambinolar solution-processed thin-film transistors based on a discotic dye turn into unipolar behavior after thermal annealing. No evidence for temperatureinduced change in injection barrier or interface trapping can be found to explain this phenomenon. Instead, a variation in morphology is considered as the cause for the observed transition from ambipolar to unipolar charge transport.

引用

收藏

页码：2715 / +

页数：6

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