From ambi- to unipolar behavior in discotic dye field-effect transistors

被引：68

作者：

Tsao, Hoi Nok ^{[1
]}

Pisula, Wojciech ^{[1
]}

Liu, Zhihong ^{[1
]}

Osikowicz, Wojciech ^{[2
]}

Salaneck, William R. ^{[2
]}

Muellen, Klaus ^{[1
]}

机构：

[1] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

[2] Linkoping Univ, Dept Phys Chem & Biol, IFM, S-58183 Linkoping, Sweden

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 14期

关键词：

D O I：

10.1002/adma.200702992

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ambinolar solution-processed thin-film transistors based on a discotic dye turn into unipolar behavior after thermal annealing. No evidence for temperatureinduced change in injection barrier or interface trapping can be found to explain this phenomenon. Instead, a variation in morphology is considered as the cause for the observed transition from ambipolar to unipolar charge transport.

引用

收藏

页码：2715 / +

页数：6

相关论文

共 30 条

[21] Integrated, high-mobility polymer field-effect transistors driving polymer light-emitting diodes [J].

Sirringhaus, H ;

Tessler, N ;

Friend, RH .

SYNTHETIC METALS, 1999, 102 (1-3) :857-860

[22] Near-infrared light-emitting ambipolar organic field-effect transistors [J].

Smits, Edsger C. P. ;

Setayesh, Sepas ;

Anthopoulos, Thomas D. ;

Buechel, Michael ;

Nijssen, Wim ;

Coehoorn, Reinder ;

Blom, Paul W. M. ;

de Boer, Bert ;

de Leeuw, Dago M. .

ADVANCED MATERIALS, 2007, 19 (05) :734-+

[23] Ambipolar charge transport in organic field-effect transistors [J].

Smits, Edsger C. P. ;

Anthopoulos, Thomas D. ;

Setayesh, Sepas ;

van Veenendaal, Erik ;

Coehoorn, Reinder ;

Blom, Paul W. M. ;

de Boer, Bert ;

de Leeuw, Dago M. .

PHYSICAL REVIEW B, 2006, 73 (20)

[24] Polymeric bipolar thin-film transistor utilizing conducting polymer containing electron transport dye [J].

Tada, K ;

Harada, H ;

Yoshino, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (7B) :L944-L946

[25] High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments [J].

Tatemichi, Shuhei ;

Ichikawa, Musubu ;

Koyama, Toshiki ;

Taniguchi, Yoshio .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

[26] Fermi-level pinning at conjugated polymer interfaces [J].

Tengstedt, C ;

Osikowicz, W ;

Salaneck, WR ;

Parker, ID ;

Hsu, CH ;

Fahlman, M .

APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3

[27] High-mobility bottom-contact n-channel organic transistors and their use in complementary ring oscillators -: art. no. 082104 [J].

Yoo, B ;

Jung, T ;

Basu, D ;

Dodabalapur, A ;

Jones, BA ;

Facchetti, A ;

Wasielewski, MR ;

Marks, TJ .

APPLIED PHYSICS LETTERS, 2006, 88 (08)

[28] Gate dielectric chemical structure-organic field-effect transistor performance correlations for electron, hole, and ambipolar organic semiconductors [J].

Yoon, Myung-Han ;

Kim, Choongik ;

Facchetti, Antonio ;

Marks, Tobin J. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (39) :12851-12869

[29] Spatial control of the recombination zone in an ambipolar light-emitting organic transistor [J].

Zaumseil, J ;

Friend, RH ;

Sirringhaus, H .

NATURE MATERIALS, 2006, 5 (01) :69-74

[30] Electron and ambipolar transport in organic field-effect transistors [J].

Zaumseil, Jana ;

Sirringhaus, Henning .

CHEMICAL REVIEWS, 2007, 107 (04) :1296-1323