Direct observation of the coexistence of coherent and incoherent InAs self-assembled dots by x-ray scattering

被引:19
作者
Malachias, A
Magalhaes-Paniago, R
Neves, BRA
Rodrigues, WN
Moreira, MVB
Pfannes, HD
de Oliveira, AG
Kycia, S
Metzger, TH
机构
[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
[2] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil
[3] Univ Munich, Sekt Phys, D-80539 Munich, Germany
[4] Univ Munich, Ctr nano Sci, D-80539 Munich, Germany
[5] CETEC, Lab Nanscopia, BR-31170000 Belo Horizonte, MG, Brazil
关键词
D O I
10.1063/1.1427421
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, grazing incidence x-ray scattering is employed as a method to identify relaxed islands in an ensemble of partially coherent self-assembled InAs quantum dots. A simple model of strained pyramidal islands enables the association of the local lattice parameter of an island to its lateral size. A comparison between the island side length and its strain state allows the identification of coherent and incoherent nanostructures, revealing the size-strain interplay during growth. (C) 2001 American Institute of Physics.
引用
收藏
页码:4342 / 4344
页数:3
相关论文
共 12 条
[1]   Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor [J].
Choi, BH ;
Hwang, SW ;
Kim, IG ;
Shin, HC ;
Kim, Y ;
Kim, EK .
APPLIED PHYSICS LETTERS, 1998, 73 (21) :3129-3131
[2]  
COWLEY JM, 1981, DIFFRACTION PHYSICS
[3]  
FAFARD S, 1996, SCIENCE, V274, P5291
[4]   X-ray determination of vertical ordering of InAs quantum dots in InAs/GaAs multilayers [J].
González, JC ;
Magalhaes-Paniago, R ;
Rodrigues, WN ;
Malachias, A ;
Moreira, MVB ;
de Oliveira, AG ;
Mazzaro, I ;
Cusatis, C ;
Metzger, TH ;
Peisl, J .
APPLIED PHYSICS LETTERS, 2001, 78 (08) :1056-1058
[5]   Interdependence of strain and shape in self-assembled coherent InAs islands on GaAs [J].
Kegel, I ;
Metzger, TH ;
Fratzl, P ;
Peisl, J ;
Lorke, A ;
Garcia, JM ;
Petroff, PM .
EUROPHYSICS LETTERS, 1999, 45 (02) :222-227
[6]  
KEGEL I, 2001, PHYS REV B
[7]   CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].
LEONARD, D ;
POND, K ;
PETROFF, PM .
PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692
[8]   Quantum dot infrared photodetectors [J].
Liu, HC ;
Gao, M ;
McCaffrey, J ;
Wasilewski, ZR ;
Fafard, S .
APPLIED PHYSICS LETTERS, 2001, 78 (01) :79-81
[9]   Coherent-to-incoherent transition in surfactant mediated growth of InAs quantum dots [J].
Neves, BRA ;
Andrade, MS ;
Rodrigues, WN ;
Safar, GAM ;
Moreira, MVB ;
de Oliveira, AG .
APPLIED PHYSICS LETTERS, 1998, 72 (14) :1712-1714
[10]  
Ostwald W, 1900, Z PHYS CHEM-STOCH VE, V34, P495