Characterization of transparent and conductive electrodes of indium tin oxide thin films by sequential reactive evaporation

被引:30
作者
Penza, M
Cozzi, S
Tagliente, MA
Mirenghi, L
Martucci, C
Quirini, A
机构
[1] PASTIS CNRSM, I-72100 Brindisi, Italy
[2] ENIRISORSE, I-30175 Venice, Italy
关键词
indium tin oxide films; transparent and conductive electrodes; sequential reactive evaporation;
D O I
10.1016/S0040-6090(99)00182-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ITO thin films have been deposited onto glass substrates by sequential reactive evaporation as transparent and conductive electrodes for devices. The method has the advantage of low enough temperatures (less than or equal to 200 degrees C) for the processes of preparation and post-annealing, accurate control of single layer thickness, simplicity and low cost. ITO films with electrical resistivity of 10(-2) Omega cm and optical transparency greater than 90% have been obtained. The structural, compositional, electrical, optical properties of the films depend on the annealing time. The stability of the electrical and optical properties of the electrodes has been investigated showing the feasibility of producing high quality ITO films by this method. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:71 / 77
页数:7
相关论文
共 28 条
[1]   EVIDENCE OF A SIMPLE CUBIC PHASE IN ELECTRON-BEAM VACUUM-EVAPORATED INDIUM OXIDE ON A GLASS SUBSTRATE [J].
ABBAS, M ;
QAZI, IA ;
SAMINA, A ;
MASAOOD, M ;
MAJEED, A ;
ULHAQ, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (01) :151-152
[2]   A study of the optical, electrical and structural properties of reactively sputtered InOx and ITOx films [J].
AlAjili, ANH ;
Bayliss, SC .
THIN SOLID FILMS, 1997, 305 (1-2) :116-123
[3]   PRECISE MEASUREMENTS OF OXYGEN-CONTENT - OXYGEN VACANCIES IN TRANSPARENT CONDUCTING INDIUM OXIDE-FILMS [J].
BELLINGHAM, JR ;
MACKENZIE, AP ;
PHILLIPS, WA .
APPLIED PHYSICS LETTERS, 1991, 58 (22) :2506-2508
[4]   Deposition of indium tin oxide films by laser ablation: Processing and characterization [J].
Cali, C ;
Mosca, M ;
Targia, G .
SOLID-STATE ELECTRONICS, 1998, 42 (05) :877-879
[5]   Optimization of sputtered ITO films with respect to the oxygen partial pressure and substrate temperature [J].
Carl, K ;
Schmitt, H ;
Friedrich, I .
THIN SOLID FILMS, 1997, 295 (1-2) :151-155
[6]  
Grove A.S., 1967, PHYS TECHNOLOGY SEMI
[7]   OPTICAL-PROPERTIES OF TRANSPARENT AND INFRA-RED-REFLECTING ITO FILMS IN THE 0.2-50-MU-M RANGE [J].
HAMBERG, I ;
GRANQVIST, CG ;
BERGGREN, KF ;
SERNELIUS, BE ;
ENGSTROM, L .
VACUUM, 1985, 35 (06) :207-209
[8]  
*JOINT COMM POWD D, 1990, 6416 JOINT COMM POWD
[9]  
*JOINT COMM POWD D, 1990, 5642 JOINT COMM POWD
[10]   ZnS:Mn thin-film electroluminescent devices prepared by metalorganic chemical vapor deposition [J].
Kina, H ;
Yamada, Y ;
Maruta, Y ;
Tamura, Y .
JOURNAL OF CRYSTAL GROWTH, 1996, 169 (01) :33-39