Ripple propagation and velocity dispersion on ion-beam-eroded silicon surfaces

被引：104

作者：

Habenicht, S

Lieb, KP

Koch, J

Wieck, AD

机构：

[1] Univ Gottingen, Inst Phys 2, D-37073 Gottingen, Germany

[2] Univ Gottingen, Sonderforsch Bereich 345, D-37073 Gottingen, Germany

[3] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.65.115327

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The propagation of surface ripples during Ga ion beam erosion of Si was measured in real time by combining focused ion beam technology with scanning electron microscopy. By detecting the secondary electrons emitted during implantation the surface was monitored in situ during the erosion. The ripple wavelength increases with the erosion time as lambdaproportional tot(0.50(4)). The value of the ripple velocity was observed to agree qualitatively with the results of Monte-Carlo simulations of the erosion process, and was found to decrease with the ripple dimension like nuproportional tolambda(x)(-1.5(1)).

引用

页码：1153271 / 1153276

页数：6

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