Radiation hardness of silicon detectors -: a challenge from high-energy physics

被引：221

作者：

Lindström, G ^{[1
]}

Moll, M ^{[1
]}

Fretwurst, E ^{[1
]}

机构：

[1] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 426卷 / 01期

关键词：

radiation hardness; silicon detectors; nonionizing energy;

D O I：

10.1016/S0168-9002(98)01462-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. Problems arising from the expected hadron fluences are summarized and the use of the nonionizing energy loss for normalization of bulk damage is explained. The present knowledge on the deterioration effects caused by irradiation is described leading to an appropriate modeling. Examples are given for a correlation between the change in the macroscopic performance parameters and effects to be seen on the microscopic level by defect analysis. Finally possible ways are out-lined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 15

页数：15

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