Photoluminescence properties of MgS/CdSe quantum wells and quantum dots

被引：21

作者：

Funato, M ^{[1
]}

Balocchi, A

Bradford, C

Prior, KA

Cavenett, BC

机构：

[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland

[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 03期

关键词：

D O I：

10.1063/1.1435407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of MgS/CdSe quantum structures grown by molecular beam epitaxy are characterized by photoluminescence (PL) spectroscopy. The increase in the CdSe thickness from 1 to beyond 3 ML results in the formation of, at first, quantum wells (QWs) and then quantum dots (QDs) by Stranski-Krastanov growth. The PL temperature dependence measurements reveal that, in the QWs, excitons localized by potential fluctuations principally govern the PL properties, which is in strong contrast to the QD PL properties. (C) 2002 American Institute of Physics.

引用

页码：443 / 445

页数：3

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