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ITO surface smoothing with argon cluster ion beam

被引：8
作者：
Heck, C
Seki, T
Oosawa, T
Chikamatsu, M
Tanigaki, N
Hiraga, T
Matsuo, J
机构：
[1] Natl Inst Adv Ind Sci & Technol, Lab Purified Mat, Photon Res Inst, Osaka 5638577, Japan
[2] Kyoto Univ, Fac Engn, Quantum Sci & Engn Ctr, Kyoto 6068501, Japan
[3] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期
关键词：
gas cluster ion beam; roughness; ITO; electroluminescent devices;
D O I：
10.1016/j.nimb.2005.08.062
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Argon gas cluster ion beam (GCIB) was employed to improve the surface smoothness of indium tin oxide (ITO) substrates. The dependence of the smoothness as well as of the sputtered depth on cluster ion energy and dose has been studied. Results show that relatively low-energy (10 keV) clusters with mean size of 2000 Ar atoms are sufficient to reduce the mean roughness of the ITO surface to about one fourth of its initial value. Organic electroluminescent (EL) devices (alpha-NPD/Alq(3)/Mg-Ag) were formed on the smoothed surfaces and a considerable improve of the devices' EL efficiency was observed. (c) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：140 / 142
页数：3
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