Ultrafast optical pump THz-probe spectroscopy on silicon

被引：45

作者：

Zielbauer, J ^{[1
]}

Wegener, M ^{[1
]}

机构：

[1] UNIV KARLSRUHE,INST ANGEW PHYS,D-76128 KARLSRUHE,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 09期

关键词：

D O I：

10.1063/1.115933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the dynamics of photoexcited carriers in silicon after interband excitation with optical femtosecond pulses by probing intraband transitions with time-delayed THz pulses. The experimental data at various temperatures are compared with numerical, self-consistent solutions of the intraband polarization and Maxwell's equations. In addition, we deduce the carrier scattering rate from the comparison between experiment and theory. (C) 1996 American Institute of Physics.

引用

页码：1223 / 1225

页数：3

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