Spatial distributions of trapping centers in HfO2/SiO2 gate stacks

被引：61

作者：

Heh, D ^{[1
]}

Young, CD

Brown, GA

Hung, PY

Diebold, A

Bersuker, G

Vogel, EM

Bernstein, JB

机构：

[1] SEMATECH Inc, Austin, TX 78741 USA

[2] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA

[3] Univ Maryland, Ctr Reliabil Engn, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

关键词：

D O I：

10.1063/1.2195896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A methodology to analyze charge pumping (CP) data, which allows positions of probing traps in the dielectric to be identified, was applied to extract the spatial profile of traps in SiO2/HfO2 gate stacks. The results suggest that traps accessible by CP measurements in a wide frequency range, down to few kilohertz, are located within or near the interfacial SiO2 layer rather than in the bulk of the high-k film.

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页数：3

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