Dialkoxybithiazole: A New Building Block for Head-to-Head Polymer Semiconductors

被引:192
作者
Guo, Xugang [1 ,2 ,3 ]
Quinn, Jordan [4 ]
Chen, Zhihua [4 ]
Usta, Hakan [4 ]
Zheng, Yan [4 ]
Xia, Yu [4 ]
Hennek, Jonathan W. [1 ,2 ]
Ortiz, Rocio Ponce [1 ,2 ,5 ]
Marks, Tobin J. [1 ,2 ]
Facchetti, Antonio [1 ,2 ,4 ]
机构
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[3] S Univ Sci & Technol China, Dept Chem, Shenzhen 518055, Guangdong, Peoples R China
[4] Polyera Corp, Skokie, IL 60077 USA
[5] Univ Malaga, Dept Phys Chem, E-29071 Malaga, Spain
基金
美国国家科学基金会;
关键词
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; STRUCTURE-PROPERTY RELATIONSHIPS; HIGH-PERFORMANCE; HIGH-MOBILITY; CHARGE-TRANSPORT; POLYTHIOPHENE SEMICONDUCTORS; AMBIPOLAR SEMICONDUCTORS; CONJUGATED POLYMERS; DEVICE PERFORMANCE;
D O I
10.1021/ja3120532
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Polymer semiconductors have received great attention for organic electronics due to the low fabrication cost offered by solution-based printing techniques. To enable the desired solubility/processability and carrier mobility, polymers are functionalized with hydrocarbon chains by strategically manipulating the alkylation patterns. Note that head-to-head (HH) linkages have traditionally been avoided because the induced backbone torsion leads to poor pi-pi overlap and amorphous film microstructures, and hence to low carrier mobilities. We report here the synthesis of a new building block for HH linkages, 4,4'-dialkoxy-5,5'-bithiazole (BTzOR), and its incorporation into polymers for high performance organic thin-film transistors. The small oxygen van der Waals radius and intramolecular S(thiazolyl)center dot center dot center dot O(alkoxy) attraction promote HH macromolecular architectures with extensive pi-conjugation, low bandgaps (1.40-1.63 eV), and high crystallinity. In comparison to previously reported 3,3'-dialkoxy-2,2'-bithiophene (BTOR), BTzOR is a promising building block in view of thiazole geometric and electronic properties: (a) replacing (thiophene)C-H with (thiazole)N reduces steric encumbrance in -BTzOR-Ar- dyads by eliminating repulsive C-H center dot center dot center dot H-C interactions with neighboring arene units, thereby enhancing pi-pi overlap and film crystallinity; and (b) thiazole electron-deficiency compensates alkoxy electron-donating characteristics, thereby lowering the BTzOR polymer HOMO versus that of the BTOR analogues. Thus, the new BTzOR polymers show substantial hole mobilities (0.06-0.25 cm(2)/(V s)) in organic thin-film transistors, as well as enhanced I-on:I-off ratios and greater ambient stability than the BTOR analogues. These geometric and electronic properties make BTzOR a promising building block for new classes of polymer semiconductors, and the synthetic route to BTzOR reported here should be adaptable to many other bithiazole-based building blocks.
引用
收藏
页码:1986 / 1996
页数:11
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