Microstructure properties of Ba0.5Sr0.5TiO3 thin films on Si with conductive SrRuO3 bottom electrodes

被引：20

作者：

Jia, QX

Kung, HH

Wu, XD

机构：

[1] Mat. Science and Technology Division, Mail Stop G755, Los Alamos National Laboratory, Los Alamos

[2] Symyx, Sunnyvale, CA 94086

来源：

THIN SOLID FILMS | 1997年 / 299卷 / 1-2期

关键词：

capacitors; dielectrics; laser ablation; structural properties;

D O I：

10.1016/S0040-6090(96)09448-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Quaternary Ba0.5Sr0.5TiO3 (BSTO) thin films were deposited on (100) Si by pulsed laser deposition with conductive SrRuO3 (SRO) bottom electrodes. The growth of highly (001)-oriented SRO film on (100) Si was accomplished by using a bilayer buffer CeO2 and yttria-stabilized zirconia (YSZ). The BSTO films deposited on SRO on Si using such a buffer system were well aligned in the plane with respect to the major axes of the substrate confirmed by X-ray diffraction. The crystalline nature of the BSTO films on Si was further illustrated by Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy. The BSTO thin films exhibited a dielectric constant above 340 at 10 kHz tested from a capacitor configuration of Au/BSTO/SRO. (C) 1997 Elsevier Science S.A.

引用

收藏

页码：115 / 118

页数：4

相关论文

共 27 条

[1] EPITAXIAL-GROWTH AND DIELECTRIC-PROPERTIES OF (BA0.24SR0.76)TIO3 THIN-FILM [J].

ABE, K ;

KOMATSU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5297-5300

[2] COMPARATIVE-STUDY OF AMORPHOUS AND CRYSTALLINE (BA, SR)TIO3 THIN-FILMS DEPOSITED BY LASER-ABLATION [J].

BHATTACHARYA, P ;

KOMEDA, T ;

PARK, K ;

NISHIOKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4103-4106

[3] MICROWAVE MEASUREMENT OF THE DIELECTRIC-CONSTANT OF SR0.5BA0.5TIO3 FERROELECTRIC THIN-FILMS [J].

CARROLL, KR ;

POND, JM ;

CHRISEY, DB ;

HORWITZ, JS ;

LEUCHTNER, RE ;

GRABOWSKI, KS .

APPLIED PHYSICS LETTERS, 1993, 62 (15) :1845-1847

[4] PREPARATION OF BARIUM STRONTIUM-TITANATE THIN-FILM CAPACITORS ON SILICON BY METALLORGANIC DECOMPOSITION [J].

CATALAN, AB ;

MANTESE, JV ;

MICHELI, AL ;

SCHUBRING, NW ;

POISSON, RJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2541-2543

[5] SINGLE-CRYSTAL EPITAXIAL THIN-FILMS OF THE ISOTROPIC METALLIC OXIDES SR1-XCAXRUO3 (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) [J].

EOM, CB ;

CAVA, RJ ;

FLEMING, RM ;

PHILLIPS, JM ;

VANDOVER, RB ;

MARSHALL, JH ;

HSU, JWP ;

KRAJEWSKI, JJ ;

PECK, WF .

SCIENCE, 1992, 258 (5089) :1766-1769

[6] FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES [J].

EOM, CB ;

VANDOVER, RB ;

PHILLIPS, JM ;

WERDER, DJ ;

MARSHALL, JH ;

CHEN, CH ;

CAVA, RJ ;

FLEMING, RM ;

FORK, DK .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2570-2572

[7] EPITAXIAL YTTRIA-STABILIZED ZIRCONIA ON HYDROGEN-TERMINATED SI BY PULSED LASER DEPOSITION [J].

FORK, DK ;

FENNER, DB ;

CONNELL, GAN ;

PHILLIPS, JM ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1990, 57 (11) :1137-1139

[8]

GILBERT SR, 1994, MATER RES SOC SYMP P, V335, P41

[9] DIELECTRIC-PROPERTIES OF (BA, SR)TIO3 THIN-FILMS DEPOSITED BY RF-SPUTTERING [J].

HORIKAWA, T ;

MIKAMI, N ;

MAKITA, T ;

TANIMURA, J ;

KATAOKA, M ;

SATO, K ;

NUNOSHITA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4126-4130

[10] STRUCTURE AND PROPERTIES OF EPITAXIAL BA0.5SR0.5TIO3/SRRUO3/ZRO2 HETEROSTRUCTURE ON SI GROWN BY OFF-AXIS SPUTTERING [J].

HOU, SY ;

KWO, J ;

WATTS, RK ;

CHENG, JY ;

FORK, DK .

APPLIED PHYSICS LETTERS, 1995, 67 (10) :1387-1389