Development of GaN Wide Bandgap Technology for Microwave Power Applications

被引：24

作者：

Nuttinck, S. ^{[1
]}

Gebara, E. ^{[1
]}

Laskar, J. ^{[1
]}

Harris, M. ^{[2
]}

机构：

[1] Georgia Inst Technol, Atlanta, GA 30332 USA

[2] Georgia Tech Res Inst, Atlanta, GA 30332 USA

来源：

IEEE MICROWAVE MAGAZINE | 2002年 / 3卷 / 01期

关键词：

D O I：

10.1109/6668.990699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A complete investigation of GaN-based wide-bandgap electronic devices and circuits is presented. It includes an understanding of the device technology, of the devices' reliability, and the development of circuits and system applications. Such study is crucial to provide a mature technology based on GaN.

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收藏

页码：80 / 87

页数：6

相关论文

共 21 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2]

[Anonymous], 1997, P TOP S MILL WAV

[3] AlGaN GaN dual-gate modulation-doped field-effect transistors [J].

Chen, CH ;

Krishnamurthy, K ;

Keller, S ;

Parish, G ;

Rodwell, M ;

Mishra, UK ;

Wu, YF .

ELECTRONICS LETTERS, 1999, 35 (11) :933-935

[4]

Chin V.W.L., J APPL PHYS, V75, P7365

[5] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].

DAMBRINE, G ;

CAPPY, A ;

HELIODORE, F ;

PLAYEZ, E .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) :1151-1159

[6]

FISHER D, 1995, GALLIUM ARSENIDE IC, V1

[7] SUBTHRESHOLD KINKS IN FULLY DEPLETED SOI MOSFETS [J].

FOSSUM, JG ;

KRISHNAN, S ;

FAYNOT, O ;

CRISTOLOVEANU, S ;

RAYNAUD, C .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (12) :542-544

[8] Grasping SOI floating-body effects [J].

Krishnan, S ;

Fossum, JG .

IEEE CIRCUITS & DEVICES, 1998, 14 (04) :32-37

[9]

Krishnan S, 1995, 1995 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, P10, DOI 10.1109/SOI.1995.526435

[10] INFLUENCE OF LATTICE SELF-HEATING AND HOT-CARRIER TRANSPORT ON DEVICE PERFORMANCE [J].

LIANG, MC ;

LAW, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) :2391-2398