Stress reduction and interface quality of buried Sb delta doping layers on Si(001)

被引：10

作者：

Falta, J ^{[1
]}

Bahr, D ^{[1
]}

Hille, A ^{[1
]}

Materlik, G ^{[1
]}

Kammler, M ^{[1
]}

HornvonHoegen, M ^{[1
]}

机构：

[1] UNIV HANNOVER,INST FESTKORPERPHYS,D-30167 HANNOVER,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期

关键词：

D O I：

10.1063/1.117319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the width dependence of Sb delta (delta) doping layers grown by Si solid phase epitaxy (SPE) on the Sb surface reconstruction prior to Si deposition Depending on the Sb adsorption conditions a 2x1 and a 2xn surface reconstruction is observed, Measurements of crystal truncation rods and x-ray standing waves show a drastically reduced interface roughness and a better crystal quality for delta layers grown on Sb:Si(001)-2xn substrates in comparison to Sb:Si(001)-2x1, which we attribute to reduced surface stress of the Sb:Si(001)-2xn reconstruction. (C) 1996 American Institute of Physics.

引用

页码：2906 / 2908

页数：3

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