InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits

Integrated resonant interband tunneling (RIT) and Schottky diode structures, based on the InAs/GaSb/AlSb heterostructure system, are demonstrated for the first time, The RIT diodes are advantageous for logic circuits due to the relatively low bias voltages (similar to 100 mV) required to attain peak current densities in the mid-10(4) A/cm(2) range. The use of n-type InAs/AlSb superlattices for the semiconducting side of Schottky barrier devices provides a means for tailoring the barrier height for a given circuit architecture, The monolithically integrated RIT/Schottky structure is suitable for fabrication of a complete diode logic family (AND, OR, XOR, INV).