Tungsten and fluorine co-doping of VO2 films

被引：224

作者：

Burkhardt, W ^{[1
]}

Christmann, T ^{[1
]}

Franke, S ^{[1
]}

Kriegseis, W ^{[1
]}

Meister, D ^{[1
]}

Meyer, BK ^{[1
]}

Niessner, W ^{[1
]}

Schalch, D ^{[1
]}

Scharmann, A ^{[1
]}

机构：

[1] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany

来源：

THIN SOLID FILMS | 2002年 / 402卷 / 1-2期

关键词：

vanadiumoxide; phase transitions; optical coatings; photoelectron spectroscopy (PES);

D O I：

10.1016/S0040-6090(01)01603-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fluorine- and tungsten-doped vanadium dioxide (VO2) is a promising coating material for applications as energy-conserving windows. We prepared VO2 films simultaneously co-doped with fluorine and tungsten and report on the results of optical measurements and photoelectron spectrometry. A comparison is given to single-element doping. Clear evidence for an interaction of fluorine and tungsten in VO2 is found in the switching behaviour at the semiconductor-to-metal phase transition. An explanation is given based on two different effects of fluorine incorporation observed in the ultraviolet photoelectron spectrometry results. Concerning other film properties, the two elements act independently of each other. (C) 2002 Elsevier Science B.V All rights reserved.

引用

页码：226 / 231

页数：6

共 17 条

[1]

BAYARD MFL, 1971, SOLID STATE CHEM, V3, P484

[2]

BEGISHEV AR, 1978, FIZ TVERD TELA, V20, P951

[3] W- and F-doped VO2 films studied by photoelectron spectrometry [J].