On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

被引：58

作者：

Schubert, Martin F. ^{[1
]}

Xu, Jiuru ^{[2
]}

Dai, Qi ^{[2
]}

Mont, Frank W. ^{[1
]}

Kim, Jong Kyu ^{[1
]}

Schubert, E. Fred ^{[1
,2
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 08期

基金：

美国国家科学基金会;

关键词：

electron-hole recombination; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; EFFICIENCY;

D O I：

10.1063/1.3089691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, photoluminescence studies using resonant optical excitation in GaInN layers have been used to investigate the physical origin of efficiency droop in GaInN/GaN light-emitting diodes. In these studies, it has been assumed that in the case of resonant excitation, where electron-hole pairs are generated in the GaInN layers only, carrier transport effects play no role. We report that in contrast to this assumption, carrier escape from quantum wells does take place and shows strong dependence upon the duration of excitation and bias conditions. We also discuss the time scales required to reach steady-state conditions under pulsed optical excitation.

引用

页数：3

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