Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

被引：209

作者：

Rozhansky, I. V. ^{[1
]}

Zakheim, D. A. ^{[1
]}

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 01期

关键词：

LIGHT-EMITTING-DIODES;

D O I：

10.1002/pssa.200673567

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we argue that the quenching of external quantum efficiency (EQE) with increase of current typically observed for AlInGaN LEDs is caused by reduction of injection efficiency. It is shown as a result of numerical simulations that the current blocking AlGaN layer is inefficient at high current density due to piezoelectric field of GaN/AlGaN interface. The results of numerical simulation are in good agreement with experimental dependence of EQE on pumping. A new design of LED heterostructure is proposed, for which the EQE quenching is not expected. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：227 / 230

页数：4

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