High-power flip-chip blue light-emitting diodes based on AlGaInN

被引：22

作者：

Zakheim, DA

Smirnova, IP

Roznanskii, IV

Gurevich, SA

Kulagina, MM

Arakcheeva, EM

Onushkin, GA

Zakheim, AL

Vasil'eva, ED

Itkinson, GV

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, Sci & Technol Ctr Microelect & Submicrometer Hete, St Petersburg 194021, Russia

[2] ZAO Svetlana Optoelekt, St Petersburg 194156, Russia

来源：

SEMICONDUCTORS | 2005年 / 39卷 / 07期

关键词：

D O I：

10.1134/1.1992647

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The design and fabrication of a high-power light-emitting diode chip that has an active-region area of 1 mm(2) and emits at a wavelength of 460 nm are described. The chip structure is developed on the basis of numerical simulation and is intended for flip-chip assembly. The use of two-level interconnections for an n-type contact made it possible to obtain an unprecedentedly low series resistance (0.65 Omega) and a high uniformity of pump-current distribution. Light-emitting diodes based on the developed design operate in the continuous-wave mode in a current range of 0-2 A, and their highest emission power is 430 mW. (c) 2005 Pleiades Publishing, Inc.

引用

页码：851 / 855

页数：5

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