Pyroelectric properties of sol-gel derived lanthanum modified lead titanate thin films

被引:29
作者
No, K [1 ]
Choi, CG [1 ]
Yoon, DS [1 ]
Sung, TH [1 ]
Kim, YC [1 ]
Jeong, IS [1 ]
Lee, WJ [1 ]
机构
[1] SAMSUNG ELECTROMECH CO LTD,CTR RES & DEV,SUWON 441743,SOUTH KOREA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 5A期
关键词
sol-gel process; PLT thin film; pyroelectric coefficient; detectivity; back surface etching;
D O I
10.1143/JJAP.35.2731
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lanthanum-modified lead titanate (PLT) thin films were fabricated on Pt/Ti/SiO2/Si substrate using the sol-gel method and rapid thermal annealing technique. The pyroelectric coefficient, and the infrared responsivity and the detectivity of the films were measured using static and dynamic methods, respectively. The ferroelectric properties were also measured. The pyroelectric coefficient increased from 1.3 to 2.5 nC/cm(2) . K with increasing La content. However, these low coefficients of PLT films are due to their crystal quality and orientations. The infrared response properties of PLT films depended on their thermal time constants. tau(t) (thermal time constant) for the PLT films decreased with the La contents increasing. The effects of back surface etching on the responsivity and the detectivity were also discussed.
引用
收藏
页码:2731 / 2733
页数:3
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