Defect-free ZnSe nanowire and nanoneedle nanostructures

被引：34

作者：

Aichele, Thomas ^{[1
]}

Tribu, Adrien ^{[1
]}

Bougerol, Catherine ^{[1
]}

Kheng, Kuntheak ^{[1
]}

Andre, Regis ^{[1
]}

Tatarenko, Serge ^{[1
]}

机构：

[1] Univ Grenoble 1, CNRS, CEA, Nanophys & Semicond Grp,Inst Neel, F-38042 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 14期

关键词：

D O I：

10.1063/1.2991298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of ZnSe nanowires and nanoneedles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn-Se flux ratio. By employing a combined MBE growth of nanowires and nanoneedles without any postprocessing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2991298]

引用

页数：3

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