Temperature dependence and bowing of the bandgap in ZnSe1-xOx

被引：33

作者：

Polimeni, A

Capizzi, M

Nabetani, Y

Ito, Y

Okuno, T

Kato, T

Matsumoto, T

Hirai, T

机构：

[1] Univ Roma La Sapienza, INFM, Dipartimento Fis, I-00185 Rome, Italy

[2] Univ Yamanashi, Dept Elect & Elect Engn, Kofu, Yamanashi 4008511, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期

关键词：

D O I：

10.1063/1.1719274

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the temperature dependence of the bandgap of untreated and hydrogen-irradiated ZnSe1-xOx (x=0.23%-0.90%) alloys by photoluminescence from T=10 K to room temperature. The variation of the bandgap energy with T is similar to that of ZnSe, and does not depend on the oxygen concentration. This indicates that oxygen incorporation in ZnSe does not lead to the carrier localization observed for nitrogen incorporation in GaAs and GaP. Correspondingly, no interaction between hydrogen and oxygen is observed in hydrogenated ZnSe1-xOx. (C) 2004 American Institute of Physics.

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页码：3304 / 3306

页数：3

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