Structure of DySi2 nanowires on Si(001)

被引：89

作者：

Preinesberger, C ^{[1
]}

Becker, SK ^{[1
]}

Vandré, S ^{[1
]}

Kalka, T ^{[1
]}

Dähne, M ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 03期

关键词：

D O I：

10.1063/1.1430540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Free-standing dysprosium-silicide nanowires can be formed on Si(001) by self assembly. It is shown that the wires consist of anisotropically strained hexagonal DySi2 with the c axis aligned perpendicular to the wires. The surface is characterized by a 2x1 reconstruction due to the formation of Si dimer chains. (C) 2002 American Institute of Physics.

引用

页码：1695 / 1697

页数：3

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