Lanthanide-silicide films on silicon surfaces

被引：5

作者：

Dähne, M ^{[1
]}

Vandré, S ^{[1
]}

Preinesberger, C ^{[1
]}

Becker, SK ^{[1
]}

Busse, W ^{[1
]}

Kalka, T ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

ADVANCES IN SOLID STATE PHYSICS 41 | 2001年 / 41卷

关键词：

D O I：

10.1007/3-540-44946-9_19

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural and electronic properties of thin lanthanide-silicide films on silicon surfaces are studied using scanning-tunneling microscopy and photoelectron spectroscopy. Lanthanide-silicide layers on n-type Si(l 11) are known for their relatively low band bending, We demonstrate that in the monolayer regime even flat bands can be achieved in the Si-substrate. This condition can be conserved upon further Si-deposition, enabling to exploit the flat-band behavior for low-resistance contacts. While a layered epitaxial growth is predominant on Si(111), we observed a self-organized formation of highly homogeneous nanowires on Si(001). Depending on growth conditions, two different types of nanowires with lengths exceeding 2000 A can be formed.

引用

页码：227 / 238

页数：12

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