Reduction of 1/f carrier noise in InGaAsP/InP heterostructures by sulphur passivation of facets

被引：36

作者：

Hakimi, R

Amann, MC

机构：

[1] Institute of Technical Electronics, University of Kassel, D-34132 Kassel

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 07期

关键词：

D O I：

10.1088/0268-1242/12/7/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of facet passivation on the noise behaviour of InGaAsP/InP double-heterostructures used for 1.55 mu m laser diodes is investigated. The facet treatment with sodium sulphide resulted in a reduction of the low-frequency noise by about 30 dB (at 1 kHz). This noise reduction can clearly be attributed to the decrease of the surface state density by facet passivation. Moreover, our measurements indicate that the strong 1/f carrier noise in InGaAsP/InP semiconductor laser diodes is essentially caused by surface recombination.

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收藏

页码：778 / 780

页数：3

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