Investigation of a buried double p-n junction structure implemented in CMOS technology for wavelength-sensitive detection

被引:9
作者
Lu, GN
BenChouikha, M
Sedjil, M
Sou, G
Alquie, G
机构
[1] Laboratoire d’Electronique Analogique et Micro-Ondes, Universiteé Pierre et Marie Curie, Paris, 75252, Case 203, 4, place Jussieu
关键词
D O I
10.1080/002072197135382
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A buried double pn junction (BDJ) structure in a CMOS process has been investigated to validate a wavelength-sensing method, which consists in using the ratio of the deep junction current to the shallow junction current for wavelength determination. Theoretically, an analytical BDJ device model has been established; and experimentally a chip incorporating BDJ sensing elements as well as electronic circuitry has been designed and measured. Both simulated and measured results, which are in good agreement, confirm the monotonic increase of the spectral response of the ratio. This allows the dominant wavelength of the incident light to be identified.
引用
收藏
页码:307 / 316
页数:10
相关论文
共 5 条
[1]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[2]   ANALYTIC REPRESENTATION OF THE SILICON ABSORPTION-COEFFICIENT IN THE INDIRECT TRANSITION REGION [J].
GEIST, J ;
MIGDALL, A ;
BALTES, HP .
APPLIED OPTICS, 1988, 27 (18) :3777-3779
[3]   REFLECTANCE OF THINLY OXIDIZED SILICON AT NORMAL INCIDENCE [J].
HUEN, T .
APPLIED OPTICS, 1979, 18 (12) :1927-1932
[4]   Colour detection using a buried double p-n junction structure implemented in the CMOS process [J].
Lu, GN ;
Chouikha, MB ;
Sou, G ;
Sedjil, M .
ELECTRONICS LETTERS, 1996, 32 (06) :594-596
[5]   ABSORPTION-COEFFICIENT OF SILICON FOR SOLAR-CELL CALCULATIONS [J].
RAJKANAN, K ;
SINGH, R ;
SHEWCHUN, J .
SOLID-STATE ELECTRONICS, 1979, 22 (09) :793-795