Logic performance of 40 nm InAsHEMTs

We have experimentally evaluated the logic performance of 40 nm InAs HEMTs. For a barrier thickness of 4 nm, we find that 40 nm InAs HEMTs exhibit excellent logic figures of merit and scalability at VDS = 0.5 V, such as DIBL = 80 mV/V, S = 70 mV/dec., and f(T) = 475 GHz. These remarkable results arise from the combination of the outstanding transport properties of InAs channel, and the use of a thin insulator and a thin channel. In addition, these devices exhibit I-ON/I-OFF ratios in excess of 104, revealing that band-to-band tunneling is not a significant concern in our device design. Our InAs HEMTs exhibit an injection velocity at the virtual source point that is a factor of 1.6X higher than state-of-the-art Si n-MOSFETs, in spite of the significantly lower supply voltage.