Influence of material growth and annealing conditions on recombination processes in low-temperature-grown GaAs

被引：14

作者：

Loka, HS

Benjamin, SD

Smith, PWE

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

[2] Univ Toronto, Photon Res Ontario, Toronto, ON M5S 3G4, Canada

来源：

OPTICS COMMUNICATIONS | 1999年 / 161卷 / 4-6期

基金：

加拿大自然科学与工程研究理事会;

关键词：

material growth; recombination processes; low-temperature-grown GaAs;

D O I：

10.1016/S0030-4018(99)00059-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we report direct measurements of the recombination times in low-temperature-grown GaAs (LT-GaAs). We investigate the effect of growth and annealing conditions on the recombination dynamics involving mid-gap and localized states. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

收藏

页码：232 / 235

页数：4

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