共 20 条
[1]
ELECTROELASTIC PROPERTIES OF SULFIDES, SELENIDES, AND TELLURIDES OF ZINC AND CADMIUM
[J].
PHYSICAL REVIEW,
1963, 129 (03)
:1009-&
[2]
CORZINE SW, 1993, QUANTUM WELL LASERS, pCH1
[4]
Control of composition and growth rate of ZnMgS grown on GaP by molecular beam epitaxy using excess sulfur beam pressure
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1997, 36 (10A)
:L1283-L1286
[5]
NEAR-UV ELECTROLUMINESCENCE FROM A ZNCDSSE/ZNSSE METAL-INSULATOR-SEMICONDUCTOR DIODE ON GAP GROWN BY MOLECULAR-BEAM EPITAXY
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1993, 32 (9A)
:L1200-L1202
[6]
ICHINO K, UNPUB J APPL PHYS
[7]
ICHINO K, 1996, P INT S BLUE LAS LIG, P445
[9]
Spin exchange in excitons, the quasicubic model and deformation potentials in II-VI compounds
[J].
PHYSICAL REVIEW B-SOLID STATE,
1970, 2 (10)
:4005-4022