Control of composition and growth rate of ZnMgS grown on GaP by molecular beam epitaxy using excess sulfur beam pressure

被引：22

作者：

Ichino, K

Akiyoshi, S

Kawakami, T

Misasa, H

Kitagawa, M

Kobayashi, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 10A期

关键词：

ZnMgS; GaP substrate; molecular beam epitaxy; excess sulfur beam pressure; composition control; band gap; ZnS-based alloy;

D O I：

10.1143/JJAP.36.L1283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown ZnMgS ternary alloys on (100) GaP substrates by molecular beam epitaxy. Using excess sulfur beam pressure evaporated from an elemental S source, we successfully controlled the alloy composition and the growth rate around the lattice-match condition to GaP substrates, which were not reproducible when the S beam nas not used. From photoluminescence excitation spectra, it is observed that the band gap of Zn0.80Mg0.20S, which is lattice-matched to GaP, is 0.15 eV larger than that of ZnS.

引用

页码：L1283 / L1286

页数：4

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