GROWTH OF ZNS AND ZNCDSSE ALLOYS ON GAP USING AN ELEMENTAL SULFUR SOURCE BY MOLECULAR-BEAM EPITAXY

被引：25

作者：

ICHINO, K

ONISI, T

KAWAKAMI, Y

FUJITA, S

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90775-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MBE growth of ZnS and ZnS-based alloys using an elemental sulfur source is reported. The initial growth process has been investigated by reflection high-energy electron diffraction, and crystalline quality is evaluated by X-ray rocking curve measurement. It is shown that crystalline quality is greatly improved by using ZnS buffer grown at a high substrate temperature. However, the quality of ZnSSe with nearly lattice-matched composition is still not perfect. The results are discussed in terms of relationship between growth process and crystalline quality.

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页码：28 / 34

页数：7

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