Raman study of phonon modes and disorder effects in Pb1-xSrxSe alloys grown by molecular beam epitaxy -: art. no. 013513

被引：28

作者：

Chen, J ^{[1
]}

Shen, WZ ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 01期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2159079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report phonon modes and alloy disorder effects of Pb1-xSrxSe alloys (x <= 0.3) grown on BaF2 (111) substrates by Raman spectroscopy measurements. On the basis of phonon modes in binary PbSe and SrSe, first-, second-, and high-order Raman scattering phonon frequencies of ternary Pb1-xSrxSe are observed, together with the deduction of the disorder activated modes due to the breakdown of the selection rule. The alloy disorder is found to play a more important role than the strain effect in Pb1-xSrxSe, and has been further investigated by employing the special correlation model. The PbSe-like second-order features are also shown to broaden slightly and diminish in intensity with increasing Sr concentration, which has been attributed to a weak breakdown in the long-range order. (c) 2006 American Institute of Physics.

引用

页数：5

共 26 条

[1]

BEYER H, 2001, MAT RES SOC S P Z, P626

[2] Long-wavelength optical phonons and mode behavior of Pb1-xSrxSe thin films [J].