Observation of a Distinct Surface Molecular Orientation in Films of a High Mobility Conjugated Polymer

被引:161
作者
Schuettfort, Torben [1 ]
Thomsen, Lars [2 ]
McNeill, Christopher R. [3 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Australian Synchrotron, Clayton, Vic 3168, Australia
[3] Monash Univ, Dept Mat Engn, Clayton, Vic 3800, Australia
基金
英国工程与自然科学研究理事会; 澳大利亚研究理事会;
关键词
FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; THIN-FILMS; PHASE-SEPARATION; HOLE-MOBILITY; SMALL-ANGLE; PERFORMANCE; ALKYL; SEMICONDUCTOR; COPOLYMERS;
D O I
10.1021/ja310240q
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The molecular orientation and microstructure of films of the high-mobility semiconducting polymer poly(N,N-bis-2-octyldodecylnaphthalene- 1,4,5,8-bis-dicarboximide2,6-diyl-alt-5,5-2,2-bithiophene) (P(NDI2OD-T2)) are probed using a combination of grazing-incidence wide-angle X-ray scattering (GIWAXS) and near-edge X-ray absorption fine-structure (NEXAFS) spectroscopy. In particular a novel approach is used whereby the bulk molecular orientation and surface molecular orientation are simultaneously measured on the same sample using NEXAFS spectroscopy in an angle-resolved transmission experiment. Furthermore, the acquisition of bulk-sensitive NEXAFS data enables a direct comparison of the information provided by GIWAXS and NEXAFS. By comparison of the bulk-sensitive and surface-sensitive NEXAFS data, a distinctly different molecular orientation is observed at the surface of the film compared to the bulk. While a more "face-on" orientation of the conjugated backbone is observed in the bulk of the film, consistent with the lamella orientation observed by GIWAXS, a more "edge-on" orientation is observed at the surface of the film with surface-sensitive NEXAFS spectroscopy. This distinct edge-on surface orientation explains the high in-plane mobility that is achieved in top-gate P(NDI2OD-T2) field-effect transistors (FETs), while the bulk face-on texture explains the high out-of-plane mobilities that are observed in time-of-flight and diode measurements. These results also stress that GIWAXS lacks the surface sensitivity required to probe the microstructure of the accumulation layer that supports charge transport in organic FETs and hence may not necessarily be appropriate for correlating film microstructure and FET charge transport.
引用
收藏
页码:1092 / 1101
页数:10
相关论文
共 42 条
[1]  
[Anonymous], 1999, XRAY SCATTERING SOFT
[2]   Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors [J].
Caironi, M. ;
Newman, C. ;
Moore, J. R. ;
Natali, D. ;
Yan, H. ;
Facchetti, A. ;
Sirringhaus, H. .
APPLIED PHYSICS LETTERS, 2010, 96 (18)
[3]   X-ray scattering study of thin films of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) [J].
Chabinyc, Michael L. ;
Toney, Michael F. ;
Kline, R. Joseph ;
McCulloch, Iain ;
Heeney, Martin .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (11) :3226-3237
[4]   Simultaneous use of small- and wide-angle X-ray techniques to analyze nanometerscale phase separation in polymer heterojunction solar cells [J].
Chiu, Mao-Yuan ;
Jeng, U-Ser ;
Su, Chiu-Hun ;
Liang, Keng S. ;
Wei, Kung-Hwa .
ADVANCED MATERIALS, 2008, 20 (13) :2573-+
[5]   Large damage threshold and small electron escape depth in X-ray absorption spectroscopy of a conjugated polymer thin film [J].
Chua, Lay-Lay ;
Dipankar, Mandal ;
Sivaramakrishnan, Sankaran ;
Gao, Xingyu ;
Qi, Dongchen ;
Wee, Andrew T. S. ;
Ho, Peter K. H. .
LANGMUIR, 2006, 22 (20) :8587-8594
[6]   General observation of n-type field-effect behaviour in organic semiconductors [J].
Chua, LL ;
Zaumseil, J ;
Chang, JF ;
Ou, ECW ;
Ho, PKH ;
Sirringhaus, H ;
Friend, RH .
NATURE, 2005, 434 (7030) :194-199
[7]   The Current Performance of the Wide Range (90-2500eV) Soft X-ray Beamline at the Australian Synchrotron [J].
Cowie, B. C. C. ;
Tadich, A. ;
Thomsen, L. .
SRI 2009: THE 10TH INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION, 2010, 1234 :307-310
[8]   High carrier mobility polythiophene thin films: Structure determination by experiment and theory [J].
DeLongchamp, Dean M. ;
Kline, R. Joseph ;
Lin, Eric K. ;
Fischer, Daniel A. ;
Richter, Lee J. ;
Lucas, Leah A. ;
Heeney, Martin ;
McCulloch, Iain ;
Northrup, John E. .
ADVANCED MATERIALS, 2007, 19 (06) :833-+
[10]   High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene [J].
Fan, Jian ;
Yuen, Jonathan D. ;
Cui, Weibin ;
Seifter, Jason ;
Mohebbi, Ali Reza ;
Wang, Mingfeng ;
Zhou, Huiqiong ;
Heeger, Alan ;
Wudl, Fred .
ADVANCED MATERIALS, 2012, 24 (46) :6164-6168