High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene

被引：107

作者：

Fan, Jian ^{[1
,2
]}

Yuen, Jonathan D. ^{[2
]}

Cui, Weibin ^{[2
]}

Seifter, Jason ^{[2
]}

Mohebbi, Ali Reza ^{[2
]}

Wang, Mingfeng ^{[2
]}

Zhou, Huiqiong ^{[2
]}

Heeger, Alan ^{[1
,2
]}

Wudl, Fred ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Energy Efficient Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 46期

基金：

美国国家科学基金会;

关键词：

polymeric materials; charge transport; thin films; conjugated polymers; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE AMBIPOLAR; POLYMER; ELECTRON; COPOLYMER; ACCEPTOR; INVERTERS; BANDGAP;

D O I：

10.1002/adma.201202195

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-mobility organic thin film transistors based on a benzobisthiadiazole-containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of "edge-on" orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm(2) V-1 s(-1).

引用

页码：6164 / 6168

页数：5

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