ZnSe GaAs band-alignment determination by deep level transient spectroscopy and photocurrent measurements

Using deep level transient spectroscopy and photocurrent measurements we have investigated Schottky contacts formed on p-isotype Zn(SSe)/GaAs heterostructures grown by molecular beam epitaxy on p-GaAs( 100) substrates. A deep level located at 0.6 eV above the ZnSe valence band is observed in agreement with literature data for p-type ZnSe, and is used as a reference level for the understanding of photocurrent transitions in the 0.8-3.0 eV energy range. The threshold energies obtained on a series of Zn(SSe)/GaAs samples are explained in terms of absorption processes from the ZnSe and GaAs valence bands, and from the nitrogen acceptor level and a deep level of the ZnSe layers located at 0.1 and 0.6 eV above the valence band maximum, respectively. These absorption processes towards the ZnSe and GaAs conduction bands have been finally used to give the values of the conduction and valence band offsets at p-ZnSe/p-GaAs interface. Our experimental data gives Delta E-c = 0.25+/-0.03 eV and Delta E-u = 1.00 +/- 0.05 eV in agreement with literature data for Zn-rich interfaces. (C) 1999 American Institute of Physics. [S0021-8979(99)01009-9].