Tuning of ZnSe-GaAs band discontinuities in heterojunction diodes

被引：14

作者：

Pellegrini, V

Borger, M

Lazzeri, M

Beltram, F

Paggel, JJ

Sorba, L

Rubini, S

Lazzarino, M

Franciosi, A

Bonard, JM

Ganiere, JD

机构：

[1] INFM, I-56126 PISA, ITALY

[2] INFM, LAB NAZL TASC, I-34012 TRIESTE, ITALY

[3] UNIV MINNESOTA, DEPT CHEM ENGN & MAT SCI, MINNEAPOLIS, MN 55455 USA

[4] ECOLE POLYTECH FED LAUSANNE, INST MICRO & OPTOELECT, CH-1015 LAUSANNE, SWITZERLAND

[5] CNR, IST ICMAT, I-00016 ROME, ITALY

[6] UNIV TRIESTE, DIPARTMENTO FIS, I-34127 TRIESTE, ITALY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 21期

关键词：

D O I：

10.1063/1.118020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers, We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0.26 eV for Zn-rich interfaces. (C) 1996 American Institute of Physics.

引用

页码：3233 / 3235

页数：3

共 22 条

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