High resolution electron microscopy study of nickel silicide - Silicon interface grown by molecular beam epitaxy

被引：3

作者：

Feng, YZ ^{[1
]}

Wu, ZQ ^{[1
]}

机构：

[1] UNIV SCI & TECHNOL CHINA,CTR FUNDAMENTAL PHYS,HEFEI 230026,PEOPLES R CHINA

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1996年 / 15卷 / 22期

关键词：

D O I：

10.1007/BF00274361

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：2000 / 2001

页数：2

共 12 条

[1] NISI2 ON SI(111) .1. EFFECTS OF SUBSTRATE CLEANING PROCEDURE AND RECONSTRUCTION [J].

AKINCI, G ;

OHNO, TR ;

WILLIAMS, ED .

SURFACE SCIENCE, 1988, 193 (03) :534-548

[2] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J].

CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862

[3] ELECTRON-MICROSCOPE STUDIES OF THE STRUCTURE AND PROPAGATION OF THE PD2SI-(111)SI INTERFACE [J].

CHERNS, D ;

SMITH, DA ;

KRAKOW, W ;

BATSON, PE .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 45 (01) :107-125

[4]

ERSKINE JL, 1984, MATER RES SOC S P, V25, P352

[5]

FOLL F, 1981, J APPL PHYS, V52, P250, DOI 10.1063/1.328440

[6]

GIBSON JM, 1984, MATER RES SOC S P, V25, P405

[7] REVIEW OF BINARY ALLOY FORMATION BY THIN-FILM INTERACTIONS [J].

OTTAVIANI, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1112-1119

[8] DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE [J].

SAITOH, S ;

ISHIWARA, H ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :203-205

[9]

TUNG RT, 1983, MATER RES SOC S P, V25, P435

[10] NI-SI MIXING - A NEW MODEL FOR LOW-TEMPERATURE SILICIDE FORMATION [J].

VANLOENEN, EJ ;

VANDERVEEN, JF ;

LEGOUES, FK .

SURFACE SCIENCE, 1985, 157 (01) :1-16

← 1 2 →