High resolution electron microscopy study of nickel silicide - Silicon interface grown by molecular beam epitaxy

被引:3
作者
Feng, YZ [1 ]
Wu, ZQ [1 ]
机构
[1] UNIV SCI & TECHNOL CHINA,CTR FUNDAMENTAL PHYS,HEFEI 230026,PEOPLES R CHINA
关键词
D O I
10.1007/BF00274361
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:2000 / 2001
页数:2
相关论文
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