Photoluminescence properties of Tb3+ in porous silicon

被引：25

作者：

Elhouichet, H ^{[1
]}

Moadhen, A

Oueslati, M

Férid, M

机构：

[1] Fac Sci Tunis, Dept Phys, Lab Spect Raman, Tunis 1060, Tunisia

[2] Inst Natl Rech Sci & Tech, Hammam Lif 2050, Tunisia

来源：

JOURNAL OF LUMINESCENCE | 2002年 / 97卷 / 01期

关键词：

porous silicon; Tb3+; photoluminescence; excitation mechanism; silicon; rare earth;

D O I：

10.1016/S0022-2313(01)00420-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Terbium (Tb3+)/porous silicon (PS) nanocomposites have been formed by impregnation of PS layer in chloride solution of terbium. Complete and uniform penetration of Tb3+ into PS layer is confirmed by Rutherford backscattering spectrometry (RBS) study. Photoluminescence (PL) spectrum shows that Tb3+ ions emit highly in the green region, while the PL band of PS is quenched. The emission of Tb3+ ions depends strongly on the excitation energy and shows a high efficiency at 488 nm corresponding to the maximum absorption band in terbium. A systematic study of the PL versus annealing temperature as performed. It shows an important improvement of the PL intensity for 700 C temperature annealing. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：34 / 39

页数：6

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